PNPN tunnel FET with controllable drain side tunnel barrier width: Proposal and analysis

A detailed study of a technique to realize a PNPN tunnel field effect transistor (TFET) with a controllable tunnel barrier width on the drain side is reported in this paper. By using the charge plasma concept on a doped N+/P− starting structure, we have demonstrated the possibility of realizing the PNPN TFET without the need for any additional chemically doped junctions. We have showed that using electrostatic doping on the drain side of TFETs provides a new design parameter, the gate-drain electrode gap. This gate-drain electrode gap can be used to control the ambipolar current in TFETs by controlling the tunneling barrier width at the channel-drain junction.