Improving ION/IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects

Improving ION/IOFF and sub-threshold swing in graphene nanoribbon field-effect transistors using single vacancy defects

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 86, October 2015, Pages 483-492

Atefeh Nazari, Rahim Faez, Hassan Shamloo,