Reliability analysis of charge plasma based double material gate oxide (DMGO) SiGe-on-insulator (SGOI) MOSFET

• Charge plasma based doping less double material gate oxide (DMGO) SGOI MOSFET.
• Evaluation of the zero temperature coefficient (ZTC) bias point.
• Various performance metrics over wide range of temperature (25–225 °C).
• DC, Analog and RF Figures of Merit (FOMs) are analyzed.
• Minimizes the doping related issues and temperature degradation of RF circuits.

A novel device named charge plasma based doping less double material gate oxide (DMGO) silicon–germanium on insulator (SGOI) double gate (DG) MOSFET is proposed for the first time. The fundamental objective in this work is to modify the channel potential, electric field and electron velocity for improving leakage current, transconductance (gm) and transconductance generation factor (TGF). Using 2-D simulation, we exhibit that the DMGO-SGOI MOSFET shows higher electron velocity at source side and lower electric field at drain side as compare to ultra-thin body (UTB) DG MOSFET. On the other hand DMGO-SGOI MOSFET demonstrates a significant improvement in gm and TGF in comparison to UTB-DG MOSFET. This work also evaluates the existence of a biasing point i.e. zero temperature coefficient (ZTC) bias point, where the device parameters become independent of temperature. The impact of operating temperature (T) on above said various performance metrics are also subjected to extensive analysis. This further validates the reliability of charge plasma DMGO SGOI MOSFET and its application opportunities involved in designing analog/RF circuits for a wide range of temperature applications.