The blueshift of the band gap energy caused by In–N clusters in InxGa1−xNyAs1−y alloys depending on the N content

• The appreciable amount In–N bonds after annealing can raise the N band.
• A model is developed to describe the blueshift of the band gap energy due to In–N clusters.
• The blueshift of the band gap energy can be considered as the relaxation behavior of the InxGa1−xNxAs1−x.

The formation of the In–N clusters in InxGa1−xNyAs1−y after annealing can cause the blueshift of the band gap energy. The reason is that the appreciable amount In–N bonds after annealing can raise the N band. In order to describe the blueshift of the band gap energy depending on the N content, a model is developed. It is found that the model can describe the blueshift of the band gap energy well. In addition, it is found that both of the blueshifts of the band gap energy due to the atom interdiffusion at the interface and the formation of the In–N clusters can be considered as the relaxation behavior of the InxGa1−xNyAs1−y alloys.

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