A method for extraction of electron mobility in power HEMTs

In this paper, a novel method for extraction of electron mobility in the two-dimensional electron gas (2DEG) under the gate of power HEMTs is presented. Using this method enables the potential impact of the gate metal and the gate voltage on electron mobility in the 2DEG under the gate to be measured without the error due to the resistive regions outside the gate, which are the gate-to-source and gate-to-drain regions. The application of the new method was demonstrated by measurements on fabricated circular HEMTs.