کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1553039 | 1513216 | 2015 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Controlling floating body effect in high temperatures: L-shape SiGe region in nano-scale MOSFET
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Controlling floating body effect in high temperatures: L-shape SiGe region in nano-scale MOSFET Controlling floating body effect in high temperatures: L-shape SiGe region in nano-scale MOSFET](/preview/png/1553039.png)
چکیده انگلیسی
In this paper a new technique for controlling floating body effect and self-heating effects is proposed. The main idea in the proposed structure is using a L-shape SiGe region in the nano-scale SOI-MOSFET (LS-SOI). The L-shape SiGe region is located in the source region and is extended under channel. The difference band gap between silicon and silicon-germanium cause discontinuity in band diagram which helps to collect channel holes. Reducing the hole density in channel of the proposed LS-SOI in comparison to conventional SOI-MOSFET (C-SOI) results in suppressed floating body effect. Also, the SiGe region under the channel decreases the lattice temperature in the LS-SOI. Replacing the SiGe with higher thermal capability than buried oxide is useful to have a reliable structure. Moreover, effective mobility, off current and sub-threshold swing improves in the proposed structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 85, September 2015, Pages 573-580
Journal: Superlattices and Microstructures - Volume 85, September 2015, Pages 573-580
نویسندگان
Mahsa Mehrad,