Quantum size effect on the electronic transitions of GaAs/AlGaAs dots under twisted light

The aim of the study is to investigate two main effects on the electronic transitions in spherically symmetric semiconductor quantum dots. One of them is the result of the modification of the core/shell size for core-shell semiconductors. Other effect is obtained from the adjustment of the parameters such as topological charge (due to the angular momentum of light) and radial node of applying twisted laser light. We are expecting to observe some special transitions and varying probability strength which cannot be observed in the case of usual linear polarized electromagnetic field. Indeed, the angular momentum of the twisted light can be transferred to the semiconductor quantum dot system and it can increase the transition probability for some quantum sizes and for some laser parameters. Because the well confinement of the electrons and the strength of the transition are quite important for the device application, as a first time, we introduce that the twisted light parameters can be used for the manipulation of the transitions.