کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1553047 | 1513216 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Stark shift of the absorption spectra in Ge/Ge1âxSnx/Ge type-I single QW cell for mid-wavelength infra-red modulators
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Stark shift of the absorption spectra in Ge/Ge1âxSnx/Ge type-I single QW cell for mid-wavelength infra-red modulators Stark shift of the absorption spectra in Ge/Ge1âxSnx/Ge type-I single QW cell for mid-wavelength infra-red modulators](/preview/png/1553047.png)
چکیده انگلیسی
For mid-wavelength infra-red (MWIR) modulation or detection applications, we propose α-Sn rich Ge/Ge1âxSnx/Ge a type-I single quantum wells (SQW) partially strain compensated on Ge1âySny relaxed layers grown onto (0 0 1)-oriented Ge substrate. Such elementary cells with W-like potential profiles of conduction and valence bands have been modeled by solving the one-dimensional Schrödinger equation under an applied external electrical field. First, strain effects on electrons, heavy holes (hh) and light holes (lh) energy bands for strained/relaxed Ge1âxSnx/Ge1âySny heterointerfaces are investigated using the model-solid theory in the whole ranges (0 ⩽ x, y ⩽ 1) of Sn compositions. From the obtained band-discontinuities, band gaps and effective masses, Ge1âySny/Ge/Ge0.80Sn0.20/Ge/Ge1âySny cells are computed as a function of the Ge0.80Sn0.20 well width for three compositions of the Ge1âySny buffer layer (y = 0.05, 0.07 and 0.09) in order to get the optimum quantum confinement of electrons and holes levels while keeping a reasonable amount of averaged strain in the cell. The electric field effect on the absorption spectra is given. An absorption coefficient in the 6à to 3 Ã 103 cmâ1 range is reasonably obtained for a SQW at room temperature with a rather large Stark shift of the direct transition between 0.46 and 0.38 eV (i.e., λ = 3.26-2.70 μm) at large external fields (50 kV/cm). These characteristics are attractive for the design of MWIR optical modulators.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 85, September 2015, Pages 629-637
Journal: Superlattices and Microstructures - Volume 85, September 2015, Pages 629-637
نویسندگان
N. Yahyaoui, N. Sfina, J.-L. Lazzari, A. Bournel, M. Said,