Electrical conductance and magnetoconductance effect on n-type porous silicon: Contribution of weak localization correction

We report the electrical conductance and magnetoconductance (MC) effect in n-type porous silicon (PS) layers. The samples show significant positive MC at room temperature and the presence of a memory effect when a perpendicular low static magnetic field is applied (first scan: 0 T → 0.8 T, second scan: 0.8 T → 0 T). We modeled the experimental results in terms of quasi-one-dimensional (quasi-1D) weak localization (WL) theory. From the fit to experimental data we determined some parameters such as the phase coherence length Lϕ, the mean free path le and the Fermi wave vector kF for different porosities. These results seem to indicate that WL effect at room temperature predominate on these inhomogeneous systems.