High permittivity material selection for design of optimum Hk VDMOS

• We have used different types of Hk material for the analysis of Hk VDMOS.
• We have explored the limitation of Hk material for design of Hk VDMOS.
• We have tested reliability and sensitivity of Hk material using BV and FOM.
• In FOM analysis, we have introduced the new term critical doping concentration.
• This is the maximum allowable doing for the optimum design of Hk VDMOS.

In this paper, we have proposed a novel approach for the selection of high permittivity (Hk) material for the optimum design of Hk vertical double diffused MOS (VDMOS). The optimum design parameters under consideration are geometry, doping concentration and breakdown voltage (BV). We have investigated reliability and sensitivity of the Hk VDMOS using BV and figure-of-merit (FOM) analysis, respectively. Further, we have compared results of Hk VDMOS with superjunction (SJ) VDMOS and conventional VDMOS. The observation clarifies that the higher doping concentration can be used in the drift region of Hk n-pillar when comparing with a SJ VDMOS and conventional VDMOS without affecting the BV. Due to this, the area-specific on-resistance (RonARonA) of the Hk VDMOS is less as compared to the SJ VDMOS and conventional VDMOS with the same BV. Using FOM, we can select the Hk material for maximum doping concentration and maximum BV with lowest RonARonA for specific design application of Hk VDMOS.