Second-order nonlinear optical properties in a strained InGaN/AlGaN quantum well under the intense laser field

• The OR and SHG coefficients in a strained InGaN/AlGaN quantum well are investigated.
• Impacts of spontaneous and piezoelectric polarization fields are taken into account.
• Effects of intense laser field, In and Al compositions, well and barrier widths are studied.
• Resonant peaks suffer a red-shift with increasing the laser field strength and barrier width.
• Resonant peaks experience a blue-shift with the increase in In and Al compositions.

In this work, the optical rectification and the second harmonic generation coefficients in a strained InGaN/AlGaN quantum well are studied. Impacts of the spontaneous and piezoelectric polarization fields on the potential profile are taken into account. The energy levels and wave functions are calculated using the fourth-order Runge–Kutta method and optical properties are obtained using the compact density matrix approach. Effects of intense laser field, In composition, Al composition, the well width and barrier width on the second-order nonlinear optical properties are investigated. Results reveal that the confinement potential is considerably affected by the laser field and internal electric field. Results also indicate that the resonant peaks experience a red-shift with increasing the laser field strength and barrier width. Moreover, the resonant peaks suffer a blue-shift with the increase in In and Al compositions.

The second harmonic generation in a 50 Å Al0.3Ga0.7N/20ÅIn0.5Ga0.5N/5ÅAl0.3Ga0.7N strained quantum well for different values of the laser parameter α0.Figure optionsDownload as PowerPoint slide