Analysis of simulation approaches for the breakdown characteristics of SOI high-voltage PMOS in a fixed power supply

• A simulation approach for breakdown characteristics of SOI HV PMOS is proposed.
• A SOI VLD field PMOS is investigated in a fixed power supply.
• The proposed simulation approach reflects more realistic device characteristics.
• The effect of REBULF is revealed for SOI HV PMOS in a fixed HV power supply.

A novel simulation approach for the breakdown characteristics of SOI high-voltage (HV) PMOS in a fixed power supply application is proposed. The different optimized parameters for the SOI HV PMOS can be achieved by the conventional and proposed simulation approaches. A SOI variation of lateral doping (VLD) field PMOS, which is widely used in the level-shift circuit is investigated by the conventional and novel simulation approaches. For the level-shift circuit with power supply of 400 V, the breakdown voltage (BV) of the optimized SOI VLD field PMOS increases from 520 V with the conventional simulation approach to 646 V with the proposed simulation approach. Moreover, the corresponding optimized doping concentration of p-drift region with the proposed approach is higher than that with the conventional approach, thus greatly reducing the specific on-resistance (Ron,sp). The SOI VLD field PMOS actually has a more robust breakdown voltage and lower Ron,sp in the fixed power supply. The BV and Ron,sp of SOI HV PMOS can be truly reflected and the effect of reduced bulk field (REBULF) is revealed in the fixed HV power supply by employing the novel simulation approach.