کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1553328 1513228 2014 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Exact solutions of the extended spin field-effect transistor
ترجمه فارسی عنوان
راه حل های دقیق از ترانزیستور اثر میدان الکتریکی اسپین
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی


• Exact solutions of the extended spin field effect transistors transport are given.
• Transmission and conductance properties of the device are discussed.
• The results’ analyses show that the transport can be totally modulated.
• Physics of the oscillations come from the coupling of the SOC and the device length.

Transmission oscillations of the ballistic spin transport through an extended spin field-effect transistor (SFET) are investigated. To the system of the normal incident electrons passing through the SFET between two normal leads, the transmission coefficients and the corresponding Landauer–Büttiker conductance can be obtained analytically. From the results it can directly find that the transport properties are obviously modulated by the spin of the incident electrons, the type and intensity of the spin–orbit coupling, the potentials strength, as well as the width of the SFET.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 73, September 2014, Pages 322–329
نویسندگان
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