Bi2Se3/Bi multiple heterostructure nanowire arrays formed by pulsed electrodeposition

• Bi2Se3/Bi heterostructure nanowire arrays were firstly prepared by electrodeposition.
• And they were confirmed and characterization by XRD/SEM/TEM/HRTEM/EDS.
• This paper provides a facile method to prepare other kind of multilayered heterostructure nanowire arrays.

Thermoelectric Bi2Se3/Bi multilayered nanowire arrays with a minimum period of about 100 nm were first successfully fabricated by a template-assisted pulsed electrodeposition process. And the effect of ion concentration on electrodeposition current was investigated by using the cyclic voltammogram. Meanwhile, the nanowires were characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy, high resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy, respectively. Large-scale and continuous nanowire arrays with multi-segment characters and uniform diameters can be observed by FE-SEM and TEM, and the randomly selected neighboring segments were characterized to be Bi2Se3 and Bi, respectively, by EDS.