A snapback suppressed reverse-conducting IGBT with built-in diode by utilizing edge termination

A reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with anti-parallel built-in diode in edge termination region is proposed. In the view of the cross section structure of the RC-IGBT, the Field Limiting Ring (FLR) and the equipotential ring act as an anode emitter and the N-Collector acts as the cathode emitter of the diode. In the aspect of layout, the anti-parallel built-in diode is integrated in the termination region which surrounds around the active cell region. Compared with the conventional RC-IGBT which integrates diode in active cell region, the proposed device can eliminate the snapback easily and conduct current uniformly at forward conduction of IGBT mode, which are favorable to the increase of conducting capability and the reliability. In addition, the forward voltage drop can be decreased largely, which is favorable to the decrease of conducting energy loss.