Modeling and parameters extraction of LDMOSFET device

• LDMOSFET model concerning package effect has been established.
• The parasitic parameters of the bonding wire and die were extracted.
• All the parameters have been obtained by measuring the S-parameter.
• TRL calibration technique was used to measure S-parameter.
• Works were confirmed by comparing the results between experiments and simulations.

To overcome parasitic parameters of the contact between probes and die in the radio frequency band, a small-signal equivalent circuit model concerning package effect for the LDMOSFET has been established in this paper. By measuring the S-parameter, using comparative experiments and improved Cold-FET technology to extract the parasitic parameters of the bonding wires and die, all the parameters have been obtained. Finally, by comparing the results between experiments and simulations, the accuracy of model and the feasibility of parameters extraction technique have been confirmed.