Analytical modeling of linearly graded alloy material gate recessed ultra thin body source/drain SON MOSFET

• The model incorporates concept of work function engineering with recessed source/drain.
• The model combines the benefits obtained from both on ultra thin body SOI/SON MOSFET.
• The model shows its superiority against various short channel effects.
• Expected to increase the current driving capability by reducing series resistance.

An explicit analytical model of surface potential profile and threshold voltage of work function engineered gate (WFEG) recessed source/drain (Re S/D) MOSFET has been presented in this paper. A two dimensional Poisson’s equation has been solved with parabolic potential approximation to establish the expressions of front and back channel surface potential distribution and the threshold voltage has been derived from the minima of such obtained potential. In this work, the benefits of linearly graded binary alloy gate and recessed source/drain structures are expected to be available simultaneously in ultra short channel SOI/SON MOSFETs structures. Analytical results are compared with those obtained from the 2D MEDICI device simulator to validate our present model.