Resistive switching in a (0 0 ℓ)-oriented GdK2Nb5O15 thin film with tetragonal tungsten bronze type structure

• We grow a (0 0 1)-oriented GKN thin film of TTB structure on MgO substrate.
• We characterize the microstructure of GKN thin film.
• We check the ferroelectric behavior by C–V measurements.
• We get a good resistance ratio in GKN thin film, using I–V measurements.

We have grown a single oriented GdK2Nb5O15 ferroelectric thin film with tetragonal tungsten bronze (TTB) structure by pulsed laser deposition on SrRuO3/La0.5Sr0.5CoO3 bi-buffered MgO substrate. GKN thin film exhibits a single phase and (0 0 ℓ)-orientation with tall and narrow asperities. We study as the first time the resistive switching in a TTB thin film. Room temperature electrical properties were investigated in the capacitance shape, using Pt top electrodes, and revealed a significant current hysteresis making GdK2Nb5O15 as a potential candidate for resistive memory devices.