Novel reduced body charge technique in reliable nanoscale SOI MOSFETs for suppressing the kink effect

• Proposal of a PD-SOI MOSFET including a P+ embedded region.
• Formation of a useful tunnel diode in order to reduce the body accumulated holes.
• The successful mitigation of the kink effect.
• The obtained improvements in terms of short channel effects, self-heating, etc.

This paper introduces a novel reduced body charge technique in nanoscale partially depleted (PD) SOI MOSFETs by an P+-type embedded silicon region inside the buried oxide and beneath source and channel regions. The embedded region creates a proper path to release the body accumulated holes easily. Actually, the P+ embedded and N+ active silicon regions constitute an Esaki tunnel diode to release the body accumulated holes by tunnel current. This work has investigated the main characterizations such as the kink effect, short channel effects (SCEs), leakage current, gate induced drain leakage (GIDL), self-heating effect, subthreshold swing, voltage gain, unilateral power gain, and current gain which all of them show the superiority of our structure when compared with a conventional SOI MOSFET (C-SOI) in reliable low-voltage applications. All the achieved numerical results have been extracted by two-dimensional and two-carriers simulator ATLAS.

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