Ballistic transport properties in pristine/doped/pristine graphene junctions

• We study transport properties through pristine/doped/pristine graphene.
• We compute conductance as a function of impurity concentrations.
• We obtain minimum conductance as a function of impurity concentrations.
• Electron transmission coefficient is obtained independent of the impurity concentrations by translating the dependence to the doped graphene length sample.

We investigate the ballistic electron transport in a monolayer graphene with configurational averaged impurities, located between two clean graphene leads. It is shown that the electron transmission are strongly dependent on the concentration of impurities and the incident energy. In turn, the conductance computed using the Landauer formalism shows a similar behavior to those found in experimental works as a function of the applied voltage for different concentrations of impurities in the limit of low temperatures. In the limit of zero bias voltage, the conductance shows a minimum value which reduces to zero for high concentration of impurities which disentangle graphene sublattices. These results can be very helpful for exploring the tunneling mechanism of electrons through doped thermodynamically stable graphene.