Graphene nanoribbon tunnel field effect transistor with lightly doped drain: Numerical simulations

• We propose a new structure by modification of the tunneling GNRFET.
• A lightly doped region was used at the drain side of the channel.
• The proposed structure suppressed the ambipolar current.
• The proposed structure enjoys from better switching and OFF-state behavior.
• The proposed structure also shows a lesser size of DIBT.

By inserting a lightly doped region between the highly doped drain and the intrinsic channel of a graphene nanoribbon tunnel field effect transistor (GNR-TFET), we propose a new lightly doped drain (LDD)-GNR-TFET. Transport characteristics of the proposed transistor is numerically simulated, employing the third-nearest-neighbor tight-binding approximation in mode space non-equilibrium Green’s function formulism (NEGF), in ballistic regime. Simulations show, in comparison with a conventional GNR-TFET of the same dimensions, the proposed LDD-GNR-TFET exhibits a 102–103 times smaller OFF-current, an up to 105 times larger ON/OFF ratio, a shorter time delay, a smaller power-delay product (PDP) and a less drain induced barrier thinning (DIBT), besides preserving the subthreshold swing.