کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1553662 | 1513240 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Dependence of excitonic energies on barrier thicknesses: A case of ZnO/Mg0.1Zn0.9O multi-quantum wells
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Both theoretical calculation and room temperature photoluminescence (PL) measurements were employed to investigate the optical properties of ZnO/Mg0.9Zn0.1O multi-quantum wells (MQW). Firstly, we calculated the ground state energies of the excitons located in ZnO MQWs through a facile Kronig-Penney model. A clear increase of the excitonic energies was observed with narrowing the well layers or broadening the barrier regions due to the well-known quantum confinement effects (QCE). Besides, it was found that the dependence of exciton transition energies on barrier thickness could be fitted by a simple Arrhenius formula. Afterwards, a few PL measurements have been done over those MQWs, which exhibited a good agreement with theoretical analysis.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 61, September 2013, Pages 168-173
Journal: Superlattices and Microstructures - Volume 61, September 2013, Pages 168-173
نویسندگان
Xiuquan Gu, Yulong Zhao, Yinghuai Qiang,