Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage

Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 58, June 2013, Pages 101-119

A. Mandal, U. Verma, S. Chakrabarti,