Hydrostatic pressure and temperature dependence of dielectric mismatch effect on the impurity binding energy in a spherical quantum dot

• The pressure, temperature dependent impurity binding energy can be calculated.
• The pressure with dielectric mismatch effect is enhanced the impurity binding energy.
• The increment in temperature reduces the binding energy for all dot radius.
• The 1s and 1p states are considered.

Hydrostatic pressure, temperature and dielectric mismatch effects on the hydrogenic donor impurity binding energies of the low-lying states in a GaAs/AlxGa1−xAs spherical quantum dot is investigated by variational approach within the effective mass approximation. The impurity binding energy is computed as a function of dot size, hydrostatic pressure, temperature and dielectric mismatch effect. Our results show that the effect of hydrostatic pressure and dielectric mismatch effectively increases the impurity binding energy for narrower dots only. In contrast, the rise in temperature decreases the impurity binding energy for a given pressure and dot radius. Our results are in good agreement with the available literature values.