The barrier height enhancement of the Au/n-Si/Al Schottky barrier diode by electrochemically formed an organic Anthracene layer on n-Si

In this work, an Au/Anthracene/n-Si/Al Schottky barrier diode was fabricated and it was found that the diode showed good rectification properties. The characteristic parameters of the device such as barrier height, ideality factor, interface states density and series resistance were determined from the current–voltage measurements. It was seen that the Anthracene organic layer increased the effective barrier height of the Au/n-Si/Al diode since this layer creates the physical barrier between the Au and n-Si. Furthermore, the current–voltage characteristics under forward bias were found to be ohmic due to conduction at lower voltage regions. At higher voltage regions there is space charge limited conduction (SCLC) mechanism. Furthermore, the capacitance–voltage curves of the Au/Anthracene/n-Si/Al Schottky barrier diode were analyzed in the various frequencies as a function of the bias.

► We have fabricated an Au/Anthracene/n-Si/Al Schottky barrier diode by electrochemical deposition technique on n-Si substrate.
► It has been found that the barrier height of the diode is higher than Au/n-Si/Al diode and various literature reports.
► The current–voltage characteristics have been found to be space charge limited conduction (SCLC) mechanism.