کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1553764 | 1513242 | 2013 | 8 صفحه PDF | دانلود رایگان |

• The effect of temperature on binding energy of donor impurity was studied.
• The effect of temperature on the self-polarization was investigated.
• The effect of temperature on the electric field polarization was investigated.
• Calculations were performed for GaAs/Ga0.7Al0.3As spherical quantum dot.
• The self-polarization and electric field polarization were discussed.
Based on the effective mass approximation within a variational approach, we have calculated the temperature effect on the donor binding energy, self-polarization (SP), and electric field polarization (FP) in a GaAs/Ga0.7Al0.3As spherical quantum dot (SQD) with off center donor impurity under the action of electric field and hydrostatic pressure. The binding energy and polarizations are computed as a function of the temperature, and electric field strength for two different pressures. The results show that the values of the self-polarization are greater than the values of the electric field polarization. There are no reports on comparison of the SP and FP in low-dimensional structures, so far.
The variations of the self-polarization as a function of temperature for two different values of the electric field strength and hydrostatic pressure in SQD.Figure optionsDownload as PowerPoint slide
Journal: Superlattices and Microstructures - Volume 59, July 2013, Pages 13–20