Performance analysis of nanoscale germanium on insulator MOSFETs for mixed-signal system-on-chip applications

Recently high channel mobility materials such as Ge have shown promise for future nanoelectronics. In this paper we present a non-charge sheet approach to calculate the drain current based on accurate computation of 2D surface potential considering the influence of the fixed and interface-trapped charge densities for fully depleted GeOI p-MOSFETs. The present model which relies on such approach captures the effect of volume inversion. Our formulation embraces non-ideal effects like channel length modulation and velocity saturation extending its validity in the nanoscale regime. Model verification has been established by making a comparison of theoretically obtained device characteristics with reported experimental results, and also with our TCAD simulation data. Our studies reveal that GeOI devices outperform their SOI counterparts in terms of various device parameters relating to analog/radio frequency circuit applications such as transconductance, transconductance efficiency, voltage gain, cut-off frequency, maximum frequency of oscillations, and digital performance parameter like gate delay.