کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1553941 998763 2012 16 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dynamic analytical model for charge transport in octithiophene thin film transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Dynamic analytical model for charge transport in octithiophene thin film transistors
چکیده انگلیسی

In this paper, we develop a device model of an organic thin film transistor (OTFTs) in which the active layers are made of octithiophene. This model is based on variable range hopping theory, i.e., a carrier may either hop over a small distance with a high activation energy or hop over a long distance with a low activation energy. The model takes into account all the operating regimes in direct current and transient mode; the transistor symmetry is also considered. The model has been developed using a physical basis where the model parameters can easily be extracted. The current–voltage characteristics of short-channel organic TFTs have been calculated starting from the solution of the drain current equation for an enhancement mode p-channel MOSFET. A good agreement between theory model and experimental results is obtained. Different transport parameters are extracted by using a fitting method. We have extracted the mobility of charge in saturation regime using differential method. Based on first and second derivative of transfer characteristic we extracted a serial resistance, intrinsic mobility and threshold voltage. The mobility in saturation regime is reproduced using the VRH model. Finally, we give a simple small-signal equivalent circuit.


► An analytical model that describes the operation of octithiophene thin-film-transistors (TFTs) is presented.
► This model is based on the variable range hopping in an exponential DOS for organic transistors.
► The expressions of the capacitances and a simple small-signal equivalent circuit are given.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 52, Issue 6, December 2012, Pages 1103–1118
نویسندگان
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