کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1553971 | 998764 | 2012 | 11 صفحه PDF | دانلود رایگان |
Reduced surface reflectance and enhanced light trapping is required by any high efficiency solar cell. Anisotropic etching was done on silicon (1 0 0) by using tetramethyl ammonium hydroxide TMAH, (CH3)4NOH, solution at 85 °C. Process variables considered were solution concentration and time proposed by response surface methodology (RSM). An effective surface texture was resulted with reflectance less than 8% without antireflection coating. The antireflection mechanism was also co-related with the etch rate of Si. Optimized values predicted by RSM for time and TMAH concentration were 5 min and 3.50% respectively. The technique and optimization of parameters by using response surface methodology (RSM) could be valuable in the texturization process for high-efficiency Si solar cells.
► Etching was performed by using TMAH, (CH3)4NOH.
► Response surface methodology was used to optimize variables.
► Silicon etch rat was optimized to get minimum reflectivity.
► A minimum reflectivity of 7.82% has been achieved.
► Optimized values for time and concentration were 5 min and 3.50%, respectively.
Journal: Superlattices and Microstructures - Volume 52, Issue 4, October 2012, Pages 782–792