Integral gain in quantum dot semiconductor optical amplifiers

In this paper, a new formula of integral gain in quantum dot (QD) semiconductor optical amplifiers (SOAs) depending on the QD states has been derived instead of conventional bulk relation. This formula will pave the way to develop all information in regard to SOA devices. Wetting layer (WL), excited state (ES), and ground state (GS) of SOAs have been employed to study the effects of important parameters in such these devices. Good results were obtained, since the effective capture time in QD is controlled. In addition, a suitable effective capture time must give a high integrated gain that required for all-optical applications. For the bulk model, the capture time to GS is not formulated well in previous studies therefore, it underestimates QD model.