کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554029 998766 2012 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
An investigation of the gate dependence in an electronic Aharonov–Bohm interferometer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
An investigation of the gate dependence in an electronic Aharonov–Bohm interferometer
چکیده انگلیسی

In this study we have obtained the dependence of the electronic distribution on the gate shape and the applied gate voltage in a quantum Hall effect based Aharonov–Bohm interferometer using a method presented in our previous studies. We have discussed the relation between the distribution of incompressible strips and observation of Aharonov–Bohm oscillations. We have obtained the distributions of the incompressible strips for various gate voltages and have shown that a gate potential sweep and a magnetic field sweep would be equivalent. Our calculations also predict that for wider gate separations it is possible observe a silent region while sweeping the magnetic field or the gate voltage.

Figure optionsDownload as PowerPoint slideHighlights
► Distribution of the incompressible strips in an AB interferometer is obtained.
► Gate voltage dependence of the incompressible strip distribution is studied.
► Incompressible strips can be used to replace electron beams in an AB interferometer.
► An alternative iterative method is used for the solution of TFP equation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 52, Issue 3, September 2012, Pages 430–437
نویسندگان
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