Composition-dependent structural and electrical properties of PbSe1−xTex thin films

Polycrystalline PbSe1−xTex ingots were prepared by solid-state microwave synthesis. Thin films of PbSe1−xTex were then deposited onto clean glass substrates using vacuum evaporation technique. Their nanostructure morphologies and stoichiometric ratio were examined using scanning electron microscopy (SEM) and energy dispersive X-ray spectra (EDX). X-ray diffraction (XRD) patterns indicated that the lattice constants of PbSe1−xTex powders and thin films increased with the increasing amount of Te. From the electrical property measurements, the thin films were characterized by n-type behavior.

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► Polycrystalline PbSe1−xTex ingots were papered by solid-state microwave synthesis.
► Thin films of PbSe1−xTex were deposited using the vacuum evaporation technique.
► From the thermoelectric properties, the power factor increased with increasing Te content up to PbSe0.2Te0.8.