Blue–green and red luminescence from ZnO/porous silicon and ZnO:Cu/porous silicon nanocomposite films

Both ZnO and Cu doped ZnO films with strong c-axis preferred orientation have been successfully prepared on porous silicon substrate, formed by electrochemical anodization, using radio frequency reactive magnetron sputtering method. X-ray diffraction measurements showed that the intensity of (0 0 2) diffraction peak first decreased and then increased with the Cu doping content increasing. Meanwhile new weak (1 0 0), (1 0 1), (1 0 2) and (1 1 0) diffraction peaks appeared after doping. The optical band edge of ZnO:Cu films, deduced from the optical absorption spectra, shifted to a longer wavelength comparing with the undoped sample and we attributed this red shift phenomenon to the decreasing of carrier concentration. The broad light emission from 350 to 800 nm was obtained by combining the blue–green emission from ZnO with red–orange emission from porous silicon. This could be used as a source of white light emitting diode chips underlying the importance of our work. The variation and origin of the emission peaks were discussed through the Gaussian deconvolution, and the Raman scattering spectral revealed the characteristics of porous silicon and multiphonon processes.

► ZnO:Cu/PS nanocomposite films with a c-axis preferred orientation are hexagonal wurtzite structure.
► Broad white light was obtained by combining the blue–green emission from ZnO with the red–orange emission from PS.
► Cu doping improve the crystallinity and optimize the broad white light emission.
► Potential applications in white-light LEDs and display.