Hydrostatic pressure on optical absorption and refractive index changes of a shallow hydrogenic impurity in a GaAs/GaAlAs quantum wire

► Pressure induced electronic states and the optical properties of a hydrogenic donor impurity are analysed in a GaAs/GaAlAs quantum well wire. ► Calculations have been performed using Bessel functions as an orthonormal basis within a single band effective mass approximation. ► Pressure induced photoionization cross section of the hydrogenic impurity is investigated. ► The optical absorption coefficients and the refractive index changes strongly depend on the incident optical intensity and the pressure.