کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554166 | 998772 | 2012 | 9 صفحه PDF | دانلود رایگان |
In this paper, we study the electron effective Landé g-factor in the InAs quantum wire under an applied magnetic field and the Rashba effect. For this goal, we first present an analytic solution to one-particle Schrödinger equation in the presence of both magnetic field and spin–orbit interaction (SOI). Then, using the obtained energy levels, we study the electron effective Landé g-factor. It is found that: (i) The effective Landé g-factor decreases when magnetic field increases. (ii) By increasing the confinement length l0l0, the electron g-factor decreases. (iii) By increasing the strength of SOI, the electron g-factor increases.
► We study theoretically the electron effective Landé g-factor in semiconductor InAs quantum wire.
► The wire is under an applied magnetic field and the Rashba effect.
► The effective Landé g-factor decreases when magnetic field increases.
► By increasing the confinement length l0, the electron g-factor decreases.
Journal: Superlattices and Microstructures - Volume 51, Issue 1, January 2012, Pages 194–202