کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554222 | 998776 | 2011 | 10 صفحه PDF | دانلود رایگان |

Within the framework of the effective-mass approximation, the exciton states and interband optical transitions in InxGa1−xN/GaN strained quantum dot (QD) nanowire heterostructures are investigated using a variational method, in which the important built-in electric field (BEF) effects, dielectric-constant mismatch and three-dimensional confinement of the electron and hole in InxGa1−xN QDs are considered. We find that the strong BEF gives rise to an obvious reduction of the effective band gap of QDs and leads to a remarkable electron-hole spatial separation. The BEF, QD height and radius, and dielectric mismatch effects have a significant influence on exciton binding energy, electron interband optical transitions, and the exciton oscillator strength.
► The built-in electric field (BEF) reduces the effective band gap of quantum dots.
► The BEF leads to a remarkable electron-hole spatial separation.
► Dielectric mismatch obviously influences on exciton states and optical transitions.
► Exciton oscillator strength reduces if increasing quantum dot height when BEF ≠ 0.
Journal: Superlattices and Microstructures - Volume 50, Issue 5, November 2011, Pages 529–538