کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554222 998776 2011 10 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures
چکیده انگلیسی

Within the framework of the effective-mass approximation, the exciton states and interband optical transitions in InxGa1−xN/GaN strained quantum dot (QD) nanowire heterostructures are investigated using a variational method, in which the important built-in electric field (BEF) effects, dielectric-constant mismatch and three-dimensional confinement of the electron and hole in InxGa1−xN QDs are considered. We find that the strong BEF gives rise to an obvious reduction of the effective band gap of QDs and leads to a remarkable electron-hole spatial separation. The BEF, QD height and radius, and dielectric mismatch effects have a significant influence on exciton binding energy, electron interband optical transitions, and the exciton oscillator strength.


► The built-in electric field (BEF) reduces the effective band gap of quantum dots.
► The BEF leads to a remarkable electron-hole spatial separation.
► Dielectric mismatch obviously influences on exciton states and optical transitions.
► Exciton oscillator strength reduces if increasing quantum dot height when BEF ≠ 0.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 50, Issue 5, November 2011, Pages 529–538
نویسندگان
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