Effect of built-in electric field on electron Raman scattering in InGaN/GaN coupled quantum wells

Electron Raman scattering (ERS) in wurtzite InxGaN1−x/GaN coupled quantum wells (CQWs) is investigated by effective-mass approximation and second-perturbation approach, including a strong built-in electric field (BEF) effect due to the piezoelectricity and spontaneous polarization. The dependence of differential cross-section (DCS) on structural parameters of CQWs is studied. Our results show that the strong BEF gives rise to a remarkable reduction of the DCS, which is around three orders smaller than that of the CQWs without BEF. With the presence of the BEF, the emitted photon energy decreases about 10 times as a consequence of quantum-confined Stark effect.

The strong BEF leads to the abrupt reduction of the DCS, which is around three orders smaller than that of the CQWs without BEF.Figure optionsDownload as PowerPoint slideHighlights
► The DCS depends on structural parameters of CQWs, which directly determines the intensity of built-in electric field.
► The DCS of CQWs with BEF is three orders smaller than that of CQWs without BEF.
► The emitted photon energy decreases about 10 times as a consequence of quantum-confined Stark effect.