Electrical characterization of nonvolatile memory with SnO2 nano-particle in polyimide dielectric layer

The NFGM devices with SnO2 nano-particles on the p-type (100) silion-on-insulator wafers were fabricated and we analyzed the electrical characteristics such as subthreshold, threshold voltage shift and retention properties. The self-assembled SnO2 nano-particles were created by chemical reaction between the polymer layers and 5-nm-thick Sn films. The SnO2 nano-particles had spherical shape with an average diameter of 15 nm and the particle density was 2.4×1011 cm−2. The electrons were charged into SnO2 nano-particles through SiO2 tunneling layer from channel of NFGM by using Fowler-Nordheim tunneling method. The memory windows of the fabricated NFGM maintained at 0.5 V after 103 s.