کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554337 1513250 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electronic properties and dielectric response of surfaces and nanowires of silicon from ab-initio approaches
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Electronic properties and dielectric response of surfaces and nanowires of silicon from ab-initio approaches
چکیده انگلیسی

We present here an ab-initio study, within the Density Functional Theory (DFT), of the formation energy of doped Silicon Nanowires (Si-NWs). While this theoretical approach is appropriate to calculate the ground-state properties of materials, other methods, like Many-Body Perturbation Theory (MPBT) or Time Dependent Density Functional Theory (TDDFT), formally provide a correct description of the electronic excited states. Then, in the second part of this paper, we show how the many-body effects, introduced using the MBPT, modify the optical properties of the Si(100) surface.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 46, Issues 1–2, July–August 2009, Pages 234–239
نویسندگان
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