Type-II ZnTe/ZnSe quantum dots and quantum wells

ZnTe/ZnSe type-II heterostructures interfaces were investigated versus growth conditions. A well controlled Se/Zn flux ratio allows us to control the structures type: quantum dots with excitonic recombination of around 5 ns photoluminescence decay time or a quantum well with spatially indirect recombination with a much longer decay close to 100 ns. Quantum well luminescence presents a blueshift with increasing excitation power and a non exponential decay, attributed to the 2D separated electron and hole system.