کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554371 998782 2010 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Donor exciton binding energy in ZnSe wide bandgap quantum wells
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Donor exciton binding energy in ZnSe wide bandgap quantum wells
چکیده انگلیسی
Positive donor exciton binding energy is calculated as a function of well width for a Zn1−xoutMnxoutSe/Zn1−xinMnxinSe/Zn1−xoutMnxoutSe quantum well within the single band effective mass approximation for different Mn content. Exciton bound polaron is investigated for 0≤xin≤0.06, on the Mn mole fraction. We determine the interband emission energy with the mean field approximation invoking the exchange interaction between the carrier and the magnetic impurity. The interband emission energy is computed as a function of well width for different Mn content. The valence band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. It is found that the interband emission energy (i) depends on Mn mole fraction and (ii) increases linearly with an increase of the Mn content and the effect is more pronounced for the narrow well showing the quantum size effects. Also the significant increase in interband emission energy is observed due to spin splitting with Mn ion concentration. The interband emission shows a blue shift of the exciton with an increase of Mn content. Our results are in good agreement with the recent published results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 48, Issue 4, October 2010, Pages 401-407
نویسندگان
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