Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors

► A two-dimensional simulator ATLAS is used to analyze the carrier densities and band diagrams. ► Due to the high δ1(n+), higher electron density can be obtained in the dual channel. ► Within properly graded triple delta-doped sheets, wide current swing is obtained. ► It is found that the simulated data are in good agreement with experimental results.