کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554418 998785 2008 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Solution-processed ZnO nanoparticle-based semiconductor oxide thin-film transistors
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Solution-processed ZnO nanoparticle-based semiconductor oxide thin-film transistors
چکیده انگلیسی
We have prepared solution-processed oxide semiconductor thin-film transistors using ZnO nanoparticles with various particle shapes. Uniform, dense, thin films were produced by spin-coating ZnO nanoparticle dispersions containing either nanorods or nanospheres. The influence of annealing atmosphere on both nanoparticle-based TFT devices was investigated. XPS analysis revealed that the ZnO particles of the nanorod and nanosphere dispersions have distinct stoichiometries (i.e., molar ratios of Zn:O). The starting particles in turn predetermine the carrier concentration within the annealed ZnO films, which in turn determines whether the device is a semiconductor or metallic conductor, depending upon the annealing atmosphere. Grain structures of the channel layer also play an important role in determining the device performance of the nanoparticle derived ZnO TFTs.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 44, Issue 6, December 2008, Pages 761-769
نویسندگان
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