Donor binding energy and radiative life time of exciton in a strained InGaN/GaN quantum wire

Donor binding energies of positively and negatively charged impurities in a strained InGaN/GaN cylindrical quantum wire are investigated. The interband optical transition with and without the exciton is computed as a function of wire radius. The exciton oscillator strength and the exciton lifetime for radiative recombination as a function of wire radius have been computed.

► Donor binding energies of positively and negatively charged impurities in a strained InGaN/GaN wire are investigated.
► The interband optical transition with and without the exciton is computed as a function of wire radius.
► The exciton oscillator strength and the exciton lifetime for radiative recombination have been computed.