کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554586 | 1513251 | 2009 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The electrical activities of stacking faults (SFs) and partial dislocations in 4H-SiC homoepitaxial films were investigated by using the electron-beam-induced current (EBIC) technique. The basal plane dislocation was dissociated into Si(g) 30∘ and C(g) 30∘ partials under electron-beam irradiation, with a SF formed in between. The SF shows bright contrast at RT and dark contrast at 50 K in EBIC images. The reasons were discussed according to the quantum-well state of SF. C(g) 30∘ partial is always more electrically active than Si(g) 30∘ partial at each specific accelerating voltage. The EBIC contrasts of those two partials were discussed with the number of recombination centers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 45, Issues 4–5, April–May 2009, Pages 295–300
Journal: Superlattices and Microstructures - Volume 45, Issues 4–5, April–May 2009, Pages 295–300
نویسندگان
Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, Filippo Fabbri,