کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554602 1513251 2009 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Determination of diffusion length in photovoltaic crystalline silicon by modelisation of light beam induced current
چکیده انگلیسی

The diffusion length of minority carriers is one of the most important electrical parameters to qualify silicon for photovoltaic applications. One way to evaluate this parameter is to analyse the decay of the current induced when a focused beam is scanned away from the collector using Light Beam Induced Current (LBIC) technique. The LBIC signal was numerically calculated with 2D-DESSIS software under different boundary conditions, as a function of material thickness and surface recombination velocity in order to verify the limitations of analytical models and to fit the LBIC signal measured in thin silicon samples. Samples with thickness ranging from 55 μm to 2500 μm were evaluated with diffusion length values ranging from 70 μm to 2.5 mm. Analytical expressions of the Internal Quantum Efficiency (IQE) were also used to extract the minority carrier bulk and effective diffusion lengths from surface averaged spectral response and reflectivity data in thick solar cells.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 45, Issues 4–5, April–May 2009, Pages 393–401
نویسندگان
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