کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554674 | 998801 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Exciton/plasmon mixing in metal–semiconductor heterostructures
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We report on the strong coupling between surface plasmons and inorganic quantum well excitons. The sample is formed by a corrugated silver film deposited on the top of a heterostructure consisting of five GaAs/GaAlAs quantum wells grown by molecular beam epitaxy. Reflectometry experiments at low temperature (77 K) evidence the formation of plasmon/heavy-hole exciton/light-hole exciton mixed states. The interaction energies, deduced by fitting the experimental data with a coupled oscillator model, amount to 22 meV for the plasmon/light-hole exciton and 21 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon–exciton coupling are also discussed and qualitatively related to the plasmon polarization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 47, Issue 1, January 2010, Pages 50–54
Journal: Superlattices and Microstructures - Volume 47, Issue 1, January 2010, Pages 50–54
نویسندگان
Clémentine Symonds, Joel Bellessa, Jean-Claude Plenet, Edmond Cambril, Audrey Miard, Laurence Ferlazzo, Aristide Lemaître,