کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554678 | 998801 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Control of unpolarized emission in closely stacked InAs quantum dot structure
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
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![عکس صفحه اول مقاله: Control of unpolarized emission in closely stacked InAs quantum dot structure Control of unpolarized emission in closely stacked InAs quantum dot structure](/preview/png/1554678.png)
چکیده انگلیسی
In this work, we studied the effect of some growth parameters on the polarization behavior of InAs/GaAs closely stacked quantum dot (CSQDs). In particular, we focused on the surface reconstruction time of GaAs spacer, its thickness and the number of QD layers. We found that the most effective parameter to enhance the TM/TE intensity ratio is the surface reconstruction time of the GaAs spacer before the subsequent QD deposition. By varying this parameter between 20Â s and 120Â s, a TM/TE ratio as high as 0.86 has been achieved. A further fine tuning of GaAs spacer thickness and QD layer number increased this ratio up to a value of 0.92 in structures containing only 3 QD layers.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 47, Issue 1, January 2010, Pages 72-77
Journal: Superlattices and Microstructures - Volume 47, Issue 1, January 2010, Pages 72-77
نویسندگان
L. Fortunato, M.T. Todaro, V. Tasco, M. De Giorgi, M. De Vittorio, R. Cingolani, A. Passaseo,