کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1554688 998801 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
Fabrication and spectroscopy of GaN microcavities made by epitaxial lift-off
چکیده انگلیسی
A novel epitaxial lift-off process for III-nitrides, involving selective removal of a sacrificial (Al, In)N layer in a hot nitric acid etchant, is reported. This was applied to the fabrication of 1−λ GaN planar microcavities bounded by two dielectric DBRs, starting from epitaxial GaN-(Al, In)N-GaN trilayers grown on free-standing GaN or high-quality GaN template material. An optically smooth surface was retained on the GaN (0001̄) surface exposed to the nitric acid etch, with root mean square roughness values as low as 2 nm over 8 μm×8 μm areas. Photoluminescence and reflectivity spectra were recorded from completed microcavities, and the latter showed clear dips in the region of 3.5 eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 47, Issue 1, January 2010, Pages 129-133
نویسندگان
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