کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1554718 | 998802 | 2011 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The effect of hydrostatic pressure on subband structure and optical transitions in modulation-doped quantum well
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The effect of hydrostatic pressure on subband structure and optical transitions in modulation-doped quantum well The effect of hydrostatic pressure on subband structure and optical transitions in modulation-doped quantum well](/preview/png/1554718.png)
چکیده انگلیسی
Within the framework of effective-mass approximation, we have calculated theoretically the effects of hydrostatic pressure and doping concentration on subband structure and optical transitions in modulation-doped GaAs/AlxGa1âxAs quantum well for different well widths. The electronic structure of modulation-doped quantum well under the hydrostatic pressure is determined by solving the Schrödinger and Poisson equations self-consistently. The results obtained show that intersubband transitions and the subband energy levels in the modulation-doped quantum well can be significantly modified and controlled by the well width, donor concentration and hydrostatic pressure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 49, Issue 6, June 2011, Pages 635-643
Journal: Superlattices and Microstructures - Volume 49, Issue 6, June 2011, Pages 635-643
نویسندگان
F. Ungan, U. Yesilgul, S. Sakiroglu, E. Kasapoglu, H. Sari, I. Sökmen,